Defect-moderated oxidative etching of MoS2
نویسندگان
چکیده
منابع مشابه
Atomic-layer soft plasma etching of MoS2
Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2...
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Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.
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Growing high quality monolayer MoS2 with strong photoluminescence (PL) is essential to produce light-emitting devices on the atomic scale. In this study we show that rhombic monolayer MoS2 with PL intensity 8 times stronger than those of chemical vapour deposition (CVD)-grown triangular and mechanically exfoliated (ME) monolayer MoS2 can be prepared by using CVD. Both Raman and PL measurements ...
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Monolayer transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDCs. In this work, we show that the optical quality of CVD-grown MoSe2 is completely recovered if the material is sandwiched in MoS2/MoSe2/MoS2 trilayer van der Waals heterostructures. We show by means of density functional the...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2019
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5115036